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HometechChinese ‘GaN’ semiconductor firm is probed in US amid IP dispute with...

Chinese ‘GaN’ semiconductor firm is probed in US amid IP dispute with competitor

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Chinese ‘GaN’ semiconductor technology pioneer Innoscience dragged into IP dispute in US

USITC has launched an investigation into Innoscience following an IP dispute with American competitor.GaN tech has emerged as a promising alternative to silicon when it comes to semiconductor innovation, offering increased efficiency at smaller sizesSemiconductorsDylan ButtsPublished: 9:00am, 4 Jul, 2023Why you can trust SCMP

One of China’s pioneering gallium nitride (GaN) semiconductor technology companies is being probed by the United States International Trade Commission (USITC), after an intellectual property complaint was filed by an American competitor.

USITC launched an investigation into Innoscience, which makes gallium nitride-on-silicon (GaN-on-Si) semiconductor devices, last week after Efficient Power Conversion (EPC) accused the Chinese firm of infringing four patents relating to GaN transistor design and manufacturing.

Gallium nitride is a promising alternative to traditional silicon-based semiconductor technology. EPC filed its complaint in May to USITC and a US District Court in California.

“The investigations and lawsuits filed by EPC are inconsistent with the facts, and the motives and purposes are impure,” China-based Innoscience said at the time of EPC’s filings in May, adding that it would take legal measures to defend itself.

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